| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a non-volatile memory device and a method for programming the same. <P>SOLUTION: The method for programming this non-volatile memory device comprises a step in which word line voltage and bit line voltage are applied to a memory cell depending on the prescribed program conditions in the Nth programming section, a step in which it is detected whether bit line voltage is lower than detected voltage in the Nth programming section or not, and a step in which programming conditions of the (N+1)th programming section are decided by the detected result. Thereby, program fail caused by reduction of bit line voltage can be prevented and a program property can be improved. <P>COPYRIGHT: (C)2006,JPO&NCIPI</p> |
