| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide an internal voltage generator of a semiconductor memory device which can drop quickly an internal voltage level exceeding a prescribed value and a precise control method of internal voltage. <P>SOLUTION: This generator is provided with a reference voltage generator 310 for outputting reference voltage VREF_BASE having the predetermined level by applying voltage from the external power source, a level shifter 320 for outputting internal reference voltage with shifted voltage level by receiving the reference voltage from the reference voltage generator 310, active drivers (an analog driver 330, a CMOS driver 340) outputting the internal voltage when active operation is performed using the internal reference voltage, a standby driver 350 outputting the internal voltage independently of an operation state using the internal reference voltage, and a forcible discharging unit 360 discharging forcibly the internal voltage by grounding using a release pulse signal outputted from a release pulse signal generator. <P>COPYRIGHT: (C)2006,JPO&NCIPI</p> |
