| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To improve electron emission efficiency, in a thin film type electron source. <P>SOLUTION: As a material of an upper electrode of this thin film type electron source, a material having a forbidden band width larger than Si, and having electroconductivity is used. Especially, an electroconductive oxide such as an SnO<SB>2</SB>or ITO film, or a wide forbidden band width semiconductor such as GaN or SiC is used. The energy loss of an electron in the upper electrode (11) through which a hot electron passes is reduced to improve the electron emission efficiency. In the case of a diode current similar to a conventional diode current, a high emission current can be obtained. In the case of an emission current density similar to conventional emission current density, only a low drive current is required to simplify a power supply line and a drive circuit. <P>COPYRIGHT: (C)2006,JPO&NCIPI</p> |
