发明名称 |
Semiconductor device having a photodetector and method for fabricating the same |
摘要 |
The present invention is directed to a semiconductor device having a photodetector and a method of fabricating the same. The photodetector includes a visible ray absorbing pattern disposed on a top and/or bottom surface of an interconnection formed at a light shielding area between adjacent photodetectors, which prevents obliquely incident light from reaching an adjacent photodetector.
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申请公布号 |
US2006102940(A1) |
申请公布日期 |
2006.05.18 |
申请号 |
US20050280704 |
申请日期 |
2005.11.15 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
CHA YONG-WON;BAEK EUN-KYUNG;NA KYU-TAE |
分类号 |
H01L31/062;H01L21/00 |
主分类号 |
H01L31/062 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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