| 摘要 |
A memory device has a plurality of memory cells, wherein each memory cell has a trench capacitor formed in a semiconductor substrate and an access transistor for it. Each access transistor has a first contact region connected to an internal electrode of the trench capacitor, a second contact region to a bit line and a control electrode region, wherein the control electrode regions of neighboring access transistors are connected by a word line formed in the semiconductor substrate.
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