| 发明名称 |
Method for fabricating semiconductor device |
| 摘要 |
A method for fabricating a semiconductor device with high-k materials. A high-k dielectric layer is formed on a substrate, followed by a fluorine-containing treatment of the high-k dielectric layer, forming an interface containing Si-F bonds.
|
| 申请公布号 |
US2006105530(A1) |
申请公布日期 |
2006.05.18 |
| 申请号 |
US20040986692 |
申请日期 |
2004.11.12 |
| 申请人 |
NANYA TECHNOLOGY CORPORATION |
发明人 |
LAI CHAO-SUNG;WU WOEI-CHERNG;WANG JER-CHYI;FAN KUNG-MING;LIN SHIAN-JYH |
| 分类号 |
H01L21/336 |
主分类号 |
H01L21/336 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
|
| 地址 |
|
