发明名称 |
Formation technology of nano-particle films having low dielectric constant |
摘要 |
A method for forming a low dielectric constant film includes the steps of: introducing reaction gas comprising an organo Si gas and an inert gas into a reactor of a capacitively-coupled CVD apparatus; adjusting a size of fine particles being generated in the vapor phase to a nanometer order size as a function of a plasma discharge period inside the reactor; and depositing fine particles generated on a substrate being placed inside the reactor.
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申请公布号 |
US2006105583(A1) |
申请公布日期 |
2006.05.18 |
申请号 |
US20040990562 |
申请日期 |
2004.11.17 |
申请人 |
KYUSHU UNIVERSITY, NATIONAL UNIVERSITY CORPORATION |
发明人 |
IKEDA SHINGO;MATSUKI NOBUO;MORISADA YOSHINORI;WATANABE YUKIO;SHIRATANI MASAHARU;KOGA KAZUNORI;NUNOMURA SHOTA |
分类号 |
H01L21/31 |
主分类号 |
H01L21/31 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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