SEMICONDUCTOR MEMORY DEVICE WITH MOS TRANSISTORS, EACH HAVING A FLOATING GATE AND A CONTROL GATE, AND MEMORY CARD INCLUDING THE SAME

摘要

A semiconductor memory device comprises memory cells, and bit lines. The each of the memory cells has a first MOS transistor and a second MOS transistor. The first MOS transistor includes a floating gate and a control gate. The second MOS transistor has a drain connected to the source of a first MOS transistor. The bit lines connect electrically to drains of the first MOS transistors. In a write operation, a write inhibit voltage settable to a negative voltage is applied to the bit lines unconnected to a selected memory cell in a write operation.