| 摘要 |
PROBLEM TO BE SOLVED: To provide a manufacturing method for a TFT capable of simplifying a manufacturing process and reducing a manufacturing cost. SOLUTION: The manufacturing method for the TFT, where a substrate 100, a gate electrode 110, a gate insulating layer 120, a drain electrode 150, a source electrode 130 and a semiconductor layer 140 are formed in this order, and comprises a stage of applying a coating liquid that has been produced by dissolving metal precursors in the solvent to the gate insulating layer 120, and a stage of forming the drain electrode 150 and the source electrode 130 by photoreduction. COPYRIGHT: (C)2006,JPO&NCIPI
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