| 摘要 |
The invention relates to a semiconductor component with trench isolation and to an associated fabrication method, a trench isolation (STI, TTI) having a deep isolation trench with a covering insulation layer ( 10, 11 ), a side wall insulation layer ( 6 ) and an electrically conductive filling layer ( 7 ), which is electrically connected to a predetermined doping region ( 1 ) of the semiconductor substrate in a bottom region of the trench. The use of a trench contact (DTC), which has a deep contact trench with a side wall insulation layer ( 6 ) and an electrically conductive filling layer ( 7 ), which is likewise electrically connected to the predetermined doping region ( 1 ) of the semiconductor substrate in a bottom region of the contact trench, makes it possible to improve the electrical shielding properties with a reduced area requirement.
|
