发明名称 |
Method of fabricating ridge type waveguide integrated semiconductor optical device |
摘要 |
Provided is a method of fabricating a ridge type waveguide integrated semiconductor optical device. The method includes: separating a substrate into an active waveguide region and a passive waveguide region and selectively epitaxial-growing an active layer and a passive layer in the active waveguide region and the passive waveguide region, respectively, such that the active layer and the passive layer are vertically aligned with each other; sequentially forming a capping layer and an electrode connection layer on the active layer and the passive layer; forming a first insulating layer pattern on a predetermined region of the electrode connection layer disposed in the active waveguide region and simultaneously, forming a second insulating layer pattern on a predetermined region of the electrode connection layer disposed in the passive waveguide region; forming a shallow ridge type active waveguide and a shallow ridge type passive waveguide by performing an etching process using the first and second insulating layer patterns as etch masks until the capping layer is etched to a predetermined depth; and forming a passivation pattern on the entire surface of the shallow ridge type active waveguide and forming a deep ridge type passive waveguide by performing an etching process using the second insulating layer pattern as an etch mask until the substrate is etched to a predetermined depth.
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申请公布号 |
US2006104583(A1) |
申请公布日期 |
2006.05.18 |
申请号 |
US20050122998 |
申请日期 |
2005.05.06 |
申请人 |
ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE |
发明人 |
KIM JONG H.;KIM HYUN S.;KIM KANG H.;KWON OH K.;SIM EUN D.;OH KWANG R. |
分类号 |
G02B6/10 |
主分类号 |
G02B6/10 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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