| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a method and an apparatus for measuring surface carrier recombination speed capable of obtaining surface Fermi level even from FK oscillation influenced by probe light having relatively large intensity and at the same time capable of determining surface recombination speed. <P>SOLUTION: The surface of a semiconductor specimen 5 is irradiated with pumping light from an excitation light source 9 via a modulator 12 and is simultaneously irradiated with the probe light from a white light source 1, and the light modulation spectrum of the probe light reflected from the surface of the semiconductor specimen 5 is measured by a detector 8 for a PR signal, and the surface electric field strength is computed based on the period of Franz-Keldish oscillation appearing in the light modulation spectrum, and the surface recombination speed and the surface Fermi level are computed based on the relationship between the surface electric field strength and the probe light intensity. <P>COPYRIGHT: (C)2006,JPO&NCIPI</p> |
