发明名称 MICROWAVE PLASMA PROCESSOR
摘要 <P>PROBLEM TO BE SOLVED: To provide a microwave plasma processor very efficiently producing high density plasma and maintaining it, which can be downsized and is in a low cost constitution. <P>SOLUTION: The microwave derived from the slot antenna 22 of a waveguide 14 is introduced inside a chamber 20 through a microwave introduction window 18, and the plasma is produced in the chamber 20 in the microwave plasma processor. When the electron concentration of the plasma is same as rejection density of the microwave or more; a resonator 32 is constituted by collaboration of a cylinder member 16 forming a cavity and the microwave introduction window 18, and the microwave of TM<SB>mn</SB>mode is excited from the microwave derived from the slot antenna 22 and introduced inside the chamber 20. The excited microwave of TM<SB>mn</SB>mode is provided with an electric field component in the proceeding direction. Since plasma density gradient and parallel electric flux density are made constant, the electric field in the vicinity of the rejection density of the plasma is made extremely great, highly efficient ionization is carried out and high density plasma is produced and maintained. <P>COPYRIGHT: (C)2006,JPO&NCIPI
申请公布号 JP2006127914(A) 申请公布日期 2006.05.18
申请号 JP20040314665 申请日期 2004.10.28
申请人 TOKYO UNIV OF SCIENCE 发明人 OGOSHI SUMIO;TAMURA JUN
分类号 H05H1/46 主分类号 H05H1/46
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