| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a quartz glass crucible exhibiting excellent mechanical strength in use under a high temperature in the pulling of a silicon single crystal, hardly causing dislocation in initial time of the pulling and capable of improving the degree of single crystallization. <P>SOLUTION: In the quartz glass crucible used for the pulling of the silicon single crystal. a structure having a crystallization accelerating layer inserted between a crucible inside layer and a crucible outside layer is formed in a crucible drum part except a crucible bottom part and the crystallization accelerating layer is not provided in the crucible bottom part. In the quartz glass crucible as an example, a part having the crystallization accelerating layer is in a range of≥5% of the drum part length from the upper part of the crucible, 50-500 ppm aluminum or alkaline earth metal is contained in a crystallization accelerating components and the thickness of the crystallization accelerating layer is≥1 mm. <P>COPYRIGHT: (C)2006,JPO&NCIPI</p> |
