| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a nitride semiconductor device for which a leakage current is reduced, and to provide its manufacturing method. <P>SOLUTION: The nitride semiconductor device is composed of a group III-V nitride semiconductor layer, constituted of group III elements composed of at least one of a group comprising gallium, aluminum, boron and indium and group V elements, including at least nitrogen of the group comprising nitrogen, phosphorus and arsenic. The device is provided with a first nitride semiconductor layer laminated on a substrate and composed of the group III-V nitride semiconductor layer, a second nitride semiconductor layer, laminated on the first nitride semiconductor layer and composed of the group III-V nitride semiconductor layer that does not contain aluminum, for which at least one among iron, carbon, zinc and magnesium is doped as impurity, and a control electrode in Schottky contact with the second nitride semiconductor layer. <P>COPYRIGHT: (C)2006,JPO&NCIPI</p> |
