| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor memory device which operates at high speed even when a received power supply voltage is low and does not cause the occurrence of a bleed current thereby realizes reduction in the current consumption. SOLUTION: The semiconductor memory device is operated by receiving a power supply voltage and a ground voltage and includes: a first cell array (300a) for outputting a data signal to a first bit line (BL); a second cell array (300b) for outputting a data signal to a second bit line (/BL); a bit line sense amplifier (210) for sensing and amplifying a difference between the signals applied to the first and second bit lines (BL, /BL) by utilizing a voltage higher than a power supply voltage when the data signal is outputted to the first bit line (BL) or the second bit line (/BL); and a first sense amplifier power supply section (220a) for applying the voltage higher than the power supply voltage to the bit line sense amplifier. COPYRIGHT: (C)2006,JPO&NCIPI
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