发明名称 VAPOR PHASE GROWTH SYSTEM AND VAPOR PHASE GROWTH METHOD
摘要 PROBLEM TO BE SOLVED: To provide a vapor phase growth system capable of enhancing the durability of a reaction vessel and further enhancing exhaust efficiency and efficiently depositing high-quality deposit, and to provide a vapor phase growth method. SOLUTION: The pulse CVD system is equipped with the reaction vessel, a heating apparatus for controlling heating of an object to be treated arranged on a stage in the reaction vessel, a treatment gas supply system for supplying the treatment gas from a treatment gas generation source into the reaction vessel, and an exhaust system having an exhaust pump, controlling the inside of the reaction vessel to a reduced pressure and exhausting the inside of the reaction vessel, and performs the supply and exhaust of the treatment gas to and from the reaction vessel repeatedly a prescribed number of times, wherein the reaction vessel is a double tube structure consisting of an inner tube and an outer tube and an outer tube and in addition, a treatment gas storage vessel for temporarily storing the treatment gas is arranged between the reaction vessel and the treatment gas generation source, and an exhaust gas storage vessel for temporarily storing the exhaust gas is arranged between the reaction vessel and the vacuum pump. COPYRIGHT: (C)2006,JPO&NCIPI
申请公布号 JP2006124832(A) 申请公布日期 2006.05.18
申请号 JP20050285210 申请日期 2005.09.29
申请人 NICHIAS CORP 发明人 SATO KIYOSHI;ABE NAOKI;ASANO AKIRA;IRIMURA JUNICHI;SAEKI NAOHIKO
分类号 C23C16/455 主分类号 C23C16/455
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