Method for forming non-volatile memory device

摘要

A method for forming a non-volatile memory device is provided. According to the method, a device isolation layer defining an active region is formed on the device isolation layer. An upper surface of the device isolation layer is formed higher than a surface of the substrate to form a gap region surrounded by the upper portion of the device isolation layer. A tunnel insulation layer is formed on the active region, and a floating gate layer is formed on an entire surface of the substrate. The floating gate layer is reflowed by performing a hydrogen annealing to fill a gap region with the reflowed floating gate layer. The reflowed floating gate layer is planarized until the device isolation layer is exposed to form a floating gate pattern.