Method of operating a flash memory device

摘要

A method of operating a NAND flash memory device that comprising a unit string comprising a string selection transistor connected to a bit line, a cell transistor connected to the string selection transistor, and a ground selection transistor connected to the cell transistor is provided. The method comprises applying a negative bias voltage to the string selection transistor and the ground selection transistor in a stand-by mode of the NAND flash memory device.