FIELD EFFECT TRANSISTOR

摘要

A field effect transistor having less characteristic change due to driving by providing an organic semiconductor part and improving driving stability of the organic semiconductor part. The field effect transistor including a gate insulating part, the organic semiconductor part, a source electrode and a drain electrode is characterized in that a threshold voltage change is within 5V when a voltage which makes a field intensity in a gate insulating part 100±5MV/m at 70°C is applied to the gate for 5.0±0.1 hours.