发明名称 EXPOSURE MASK AND METHOD FOR DESIGNING PATTERN OF WIRING LAYER MASK
摘要 <P>PROBLEM TO BE SOLVED: To decrease shrinkage in wiring and to decrease influences of defocus. <P>SOLUTION: The exposure mask has a wiring pattern 102 and a dummy pattern 104 disposed at a predetermined distance &alpha; from an edge in the longitudinal direction of the wiring pattern 102. The edge position in the longitudinal direction of the wiring pattern 102 from which the dummy pattern 104 is disposed at a predetermined distance &alpha; is coincident with a position in another exposure mask where a via pattern is disposed. <P>COPYRIGHT: (C)2006,JPO&NCIPI
申请公布号 JP2006126431(A) 申请公布日期 2006.05.18
申请号 JP20040313741 申请日期 2004.10.28
申请人 NEC ELECTRONICS CORP 发明人 MATSUURA SEIJI
分类号 G03F1/36;G03F1/68;G03F1/70;H01L21/027;H01L21/3205;H01L21/768;H01L21/82;H01L21/822;H01L27/04 主分类号 G03F1/36
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