| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a light emitting element and the manufacturing method thereof, capable of improving light extraction efficiency without changing the structure itself of a semiconductor laminating structure comprising a light emitting layer unit. <P>SOLUTION: The light emitting element 100 is provided with an element main body unit 60. The element main body unit 60 comprises an n-type GaAs single crystal substrate 1 (shown simply as a substrate hereinafter) as a substrate for growth, an n-type GaAs buffer layer 2 formed on a first main surface, a light emitting layer unit 24 formed on the buffer layer 2, and a current diffusion layer 20 formed on the light emitting layer unit. The element main body unit 60 is provided with a cavity formed so as to have a configuration of a notch, cut in the whole or a part of the element main body unit 60 in the thickness direction thereof, in a region superposed on a light extraction side electrode 9 when a projection is considered to a plane parallel to the light extraction area LEA. <P>COPYRIGHT: (C)2006,JPO&NCIPI |
