| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To surely reject a defective chip regarded as non-defective at the inspection of electrical characteristics, and to eliminate the need for laser irradiation to the defective chip. <P>SOLUTION: Regarding the same semiconductor wafer, a defective map composed of defective information obtained by the inspection of a pattern and a probe map composed of the non-defective or defective information of electrical characteristics obtained by the inspection of a probe. Regarding the same semiconductor wafer, the defective chip on the defective map is synthesized with the probe map as the defective chip, and a mark is put on the "defective" chip on the basis of the synthesized probe map. <P>COPYRIGHT: (C)2006,JPO&NCIPI</p> |
