| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To prevent a defective short-circuit between electrodes caused by a pin hole or a failure of an interlayer insulation film, in an electrooptical device. <P>SOLUTION: At least two or more layers interlayer insulation films 14, 18 which insulate first electrodes such as a gate electrode 2, a storage capacitor common electrode 3, a gate wire 4, a gate terminal 5, a source electrode 9, a drain electrode 10, a source wire 11 and a source terminal 12, and second electrodes such as a pixel electrode 22, a gate terminal pad 23 and a source terminal pad 24 from each other are formed. At the same time, a contact hole, to be formed on the interlayer insulation films 14, 18, is formed via at least two or more steps. Even when the pin hole or the failure is produced on the interlayer insulation films 14, 18, the short-circuit defect between the electrodes except for that in the contact hole is prevented, and the yield is improved. <P>COPYRIGHT: (C)2006,JPO&NCIPI</p> |
