发明名称 METHOD FOR MANUFACTURING OXIDE SINGLE CRYSTAL
摘要 PROBLEM TO BE SOLVED: To provide a method for manufacturing an oxide single crystal having a composition nearly equal to a stoichiometric composition by a crystal-pulling method using a double crucible. SOLUTION: The method for manufacturing the oxide single crystal utilizes an edge-defined film-fed growth method (EFG method), comprising growing the single crystal by raising a melt by the capillary phenomenon through a slit-like opening part provided at the inside of a die arranged in a crucible accommodating a raw material melt and crystallizing the melt at an upper end opening part of the die. In the method, a melt of the raw material, charged into the crucible so that the single crystal composition becomes the stoichiometric composition substantially, is pulled. COPYRIGHT: (C)2006,JPO&NCIPI
申请公布号 JP2006124223(A) 申请公布日期 2006.05.18
申请号 JP20040313679 申请日期 2004.10.28
申请人 SHIN ETSU CHEM CO LTD 发明人 MAKIKAWA SHINJI;ARAI KENICHI;AOI HIROSHI
分类号 C30B15/34;C30B29/30;G03H1/02 主分类号 C30B15/34
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