| 摘要 |
PROBLEM TO BE SOLVED: To obtain a trench type MOSFET having on-resistance lower than before without lowering the productivity thereof. SOLUTION: In the trench type MOSFET, a trench 6 is formed in a semiconductor substrate wherein a substrate 1 serving as a p-type highly doped drain, an epitaxial layer 2 serving as a p-type lowly doped drain, an n-type body 3, and a p-type source diffusion portion 7 are contiguously formed in this order. The p-type source diffusion portion 7 is formed in a state of being insulated from the trench 6 to cover the trench 6 so that the on-resistance can be reduced in the trench type MOSFET. COPYRIGHT: (C)2006,JPO&NCIPI
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