| 摘要 |
PROBLEM TO BE SOLVED: To provide a manufacturing method of a semiconductor device composed of a field effect transistor equipped with a gate electrode composed of only metal silicide easy in the dissolution of depleting the problem of a gate, as well as the regulation of a work function and high in integration property with an existing process while holding predominance in cost. SOLUTION: The semiconductor device is composed of a semiconductor substrate 1, the gate electrode 19 formed on the semiconductor substrate through a gate insulating film, and a source drain 8 having an elevated structure pinching the gate electrode 19. The manufacturing method thereof comprises a process for metal-siliciding the gate electrode 19. COPYRIGHT: (C)2006,JPO&NCIPI
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