| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for epitaxially growing an InP thin film of a compound semiconductor thin film multilayer wafer. SOLUTION: A high electron mobility InP thin film is grown epitaxially by a material supply process for suppressing intermediate reaction in epitaxial growth of a compound semiconductor thin film multilayer wafer, a thermal decomposition process, and a chemical reaction process. COPYRIGHT: (C)2006,JPO&NCIPI
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