| 发明名称 |
Ultra-shallow arsenic junction formation in silicon germanium |
| 摘要 |
In one aspect, the present invention provides a method of forming junctions in a silicon-germanium layer ( 20 ). In this particular embodiment, the method comprises implanting a dopant ( 80 ) into the silicon-germanium layer ( 20 ) and implanting fluorine ( 70 ) into the silicon-germanium layer ( 20 ).
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| 申请公布号 |
US2006105518(A1) |
申请公布日期 |
2006.05.18 |
| 申请号 |
US20050267413 |
申请日期 |
2005.11.04 |
| 申请人 |
TEXAS INSTRUMENTS INCORPORATED |
发明人 |
KOHLI PUNEET;RODDER MARK;WISE RICK;JAIN AMITABH |
| 分类号 |
H01L21/8238;H01L21/336 |
主分类号 |
H01L21/8238 |
| 代理机构 |
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