| 摘要 |
<P>PROBLEM TO BE SOLVED: To manufacture a specified nano-gap electrode having a gap length of 1-20 nm and an electrode width of 100 nm or less by using a technology of patterning accuracy in the order of microns without using electron beam exposure having a high running cost. <P>SOLUTION: The method of forming the gap electrode comprises processes of forming the pattern of a photo mask on a substrate by light exposure, carrying out the first-time slanting evaporation of an electrode material, lifting it off, carrying out a second-time light exposure to form a slit pattern extended across the evaporated electrode film formed by the first-time evaporation, carrying out the second-time slanting evaporation of the electrode material, and lifting it off. In the method of forming the nano-gap electrode, when forming the slit pattern, the slit pattern is formed at an angle α<90° with respect to the first-time evaporated electrode. <P>COPYRIGHT: (C)2006,JPO&NCIPI |
