| 摘要 |
<P>PROBLEM TO BE SOLVED: To enhance reliability and yield of a semiconductor apparatus having a through electrode, and to provide its manufacturing method. <P>SOLUTION: A first pad electrode layer 12 is formed on the surface of a semiconductor substrate through a first insulating film 11. A second insulating film 13 having a first via hole for exposing the first pad electrode layer 12 locally is then formed thereon. Thereafter, a plug 14 is formed in the first via hole and a second pad electrode layer 15 connected with the plug 14 is formed on the insulating film 13, and a second via hole is formed to reach the pad electrode 12 from the back of the semiconductor substrate 10 followed by formation of a through electrode 20 and a second wiring layer 21 connected with the pad electrode 12 on the bottom of the second via hole. Furthermore, a protective layer 22 and a conductive terminal 23 are formed. Finally, the semiconductor substrate 10 is diced into semiconductor chips 10A. <P>COPYRIGHT: (C)2006,JPO&NCIPI |
