| 发明名称 |
METHOD FOR CORRECTING DEFECTIVE PATTERN OF MASK |
| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a mask defective pattern correcting method for improving the dimensional accuracy of a pattern to be transferred. <P>SOLUTION: The method is provided with an outline etching process (S104) for etching a mask material positioned on the outline of a region to be removed in a mask so that it is penetrated by using convergent ion beams and etching gas, and a removing process (S106) for removing the mask material positioned on the inner side of the outline of the region to be removed in the mask. <P>COPYRIGHT: (C)2006,JPO&NCIPI</p> |
| 申请公布号 |
JP2006128358(A) |
申请公布日期 |
2006.05.18 |
| 申请号 |
JP20040313808 |
申请日期 |
2004.10.28 |
| 申请人 |
RENESAS TECHNOLOGY CORP |
发明人 |
IRIKITA NOBUYUKI;YAMAMOTO JIRO |
| 分类号 |
H01L21/027;G03F1/20;G03F1/72;G03F1/74;H01L21/302 |
主分类号 |
H01L21/027 |
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