| 摘要 |
PROBLEM TO BE SOLVED: To provide a read-only memory which can be electrically deleted and which is electrically programmable. SOLUTION: A flash EEPROM memory cell comprises a channel region, a source region 238 of one side of the channel region, a drain region 240 of the other side, a floating gate structure 242 having a control gate portion 246 extending over the first portion of the channel region and a tunnel diode portion 244 extending over the second portion of the channel region, a tunnel oxide layer 247 arranged between the tunnel diode portion 244 and the channel region, a gate oxide layer arranged between the control gate portion 246 and the channel region, and a first portion which is arranged extending over the floating gate structure 242 and is separated by a layer of oxidation between levels. The second portion 252 extends over the portion of the channel region of the controlling gate structure 250 forms a pass transistor in series in the cell. COPYRIGHT: (C)2006,JPO&NCIPI
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