| 摘要 |
PROBLEM TO BE SOLVED: To achieve a bit line twisted structure without increase of a cell array. SOLUTION: The semiconductor memory is equipped with a first and a second bit line, BL0 and bBL0, a first cell block BK arranged in a first column 01, a first block select transistor BST connected between a first bit line BL and the first cell block BK, a second cell block BK arranged in a second column 02, and a second block select transistor BST connected between a second bit line bBL and the second cell block BK. The first and second bit lines, BL and bBL, have the bit line twisted structure, and the first and second bit lines, BL and bBL, are replaced with each other in a block selector region BS. COPYRIGHT: (C)2006,JPO&NCIPI
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