| 摘要 |
PROBLEM TO BE SOLVED: To provide a trench-type element separation that has a void capable of alleviating the stress that is applied to a semiconductor substrate from an insulating oxide film and has an excellent flatness. SOLUTION: In the element separation, a dielectric 4 is embedded in a trench 2 that is formed on part of a semiconductor substrate 1. The element separation has a first side surface 6, a second side surface 7 that is provided at a deeper position than the first side surface 6 and has a larger taper angle than the first side surface 6, and a third side surface 8 that is provided at a deeper position than the second side surface 7 and has a smaller taper angle than the second side surface 7. A void 10 is formed at a deeper position than the second side surface. During the process of manufacturing the element separation, an insulating substance is supplied from a vertical direction, and the insulating substance is caused to strike against the second side surface 7 for reflection in a process of embedding the insulating film 4 in the trench 2. Thus, the void can be formed in the lower part of the trench 2 in a self-matching manner. COPYRIGHT: (C)2006,JPO&NCIPI
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