SEMICONDUCTOR LASER APPARATUS AND ITS MANUFACTURING METHOD

摘要

PROBLEM TO BE SOLVED: To provide a semiconductor laser apparatus which has a high impurity concentration in the interface of a p-type clad layer and an active region layer. SOLUTION: In the semiconductor laser apparatus, the concentration distribution of a p-type impurity in an active region 18 in contact with a low impurity concentration layer 20a of the first p-type clad layer 20 and the high impurity concentration layer 20b of the first p-type clad layer is flat in average by a value between 7×1017cm-3and 1.1×1018cm-3in a high impurity concentration layer 20b of the first p-type clad layer. The p-type impurity concentration exists between 8×1017cm-3and 1.1×1018cm-3in the interface of the first p-type clad layer 20 and the active region layer 18, and the p-type impurity concentration is lowered to 5×1017cm-3within 50 nm from the interface of the first p-type clad layer 20 and the active region layer 18 in the active region layer 18 in contact with the first p-type clad layer 20. COPYRIGHT: (C)2006,JPO&NCIPI