| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of processing an insulating film by which an etching rate can be maintained nearly constantly in the initial stage and the later stage of processing at the time of forming a recess having a high aspect ratio in an interlayer insulating film. SOLUTION: In the method of processing the insulating film, a connection hole 18 is formed in the interlayer insulating film 16 formed on a substrate 11 by performing dry etching using an etching gas containing a fluorocarbon-based gas. Etching conditions are changed so that the amount of a fluorocarbon-based radical R produced from the fluorocarbon-based gas to the bottom face of the connection hole 18 may be maintained at a prescribed amount in accordance with the aspect ratio of the hole 18 which becomes higher as the etching progresses while dry etching is performed on the interlayer insulating film 16 with the fluorocarbon-based radical R. COPYRIGHT: (C)2006,JPO&NCIPI
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