发明名称 DATA OUTPUT CIRCUIT OF MEMORY DEVICE
摘要 A data output circuit of a memory device comprises an output enable signal generating unit, an output driving unit, an output driving unit and an output enable control unit. The output enable signal generating unit generates a reference output enable signal in response to a read command and outputting a plurality of output enable signals in response to a rising DLL clock and a falling DLL clock. The output driving unit drives data synchronously with respect to the rising DLL clock and the falling DLL clock in response to the output enable signals at a read mode. The output enable control unit disables the falling DLL clock when the output enable signals are all disabled. As a result, current consumption is reduced because the falling DLL clock is generated only when the output enable signal is generated.
申请公布号 US2006103444(A1) 申请公布日期 2006.05.18
申请号 US20040008254 申请日期 2004.12.10
申请人 HYNIX SEMICONDUCTOR INC. 发明人 KANG YONG G.
分类号 G06F1/04 主分类号 G06F1/04
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