| 摘要 |
A wafer processing device for use in semiconductor wafer processing applications as an Electro-Static Chuck (ESC) comprising a graphite substrate ans at least one electrode pattern, wherein the grooves in the electrode pattern are filled with insulating or semiconducting material selected from a group consisting of B, A1, Si, Ga, refractory hard metals, transition metals, and rare earth metals, or complexes and / or combinations thereof, forming a substantially planar surface. The substantially planar surface is then coated with at least a semiconducting layer comprising at least one of a nitride, carbide, carbonitride or oxynitride of elements selected from a group consisting of B, A, Si, Ga, refractory hard metals, transition metals, and rare earth metals, or complexes and / or combinations thereof. |
