| 摘要 |
PROBLEM TO BE SOLVED: To provide a high voltage transistor having a high breakdown voltage and to provide a method of manufacturing the same. SOLUTION: In a high voltage transistor having a high breakdown voltage and a method of manufacturing the transistor, there are formed a first insulation film pattern, which is a predetermined oxidized site in a semiconductor substrate and a second insulation film pattern, which surrounds at least partially the first insulation film pattern. A gate electrode is formed through vapor deposition of a conductive material on the substrate such that a first end portion is disposed on the first insulation film pattern and the second end portion is disposed on the second insulation film pattern, and thereafter source/drain regions are formed by implanting impurities into prescribed sites of the substrate. Concentration of an electric field on an edge portion of the gate electrode is alleviated, whereby it becomes feasible to manufacture a transistor having a high breakdown voltage. Employing a thermally oxidized film pattern and a CVD oxidized film pattern as a gate oxide film makes it possible to improve current and ON-resistance characteristics of an MOS transistor. COPYRIGHT: (C)2006,JPO&NCIPI
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