发明名称 SEMICONDUCTOR DEVICE
摘要 PROBLEM TO BE SOLVED: To prevent the deterioration of mechanical strength in entire elements, and to reduce the delay of a signal propagating through wiring. SOLUTION: First and third insulating layers for composing each wiring layer 100 contain a silicon carbonitride film, silicon carbide, and/or silicon oxide. A second insulating layer in a lower wiring layer contains the silicon oxide. A second insulating layer in an upper wiring layer contains fluorinated silicon oxide and/or carbonated silicon oxide. The relative dielectric constant of the second insulating layer in the lower wiring layer is set smaller than that of the second insulating layer in the upper wiring layer. COPYRIGHT: (C)2006,JPO&NCIPI
申请公布号 JP2006128722(A) 申请公布日期 2006.05.18
申请号 JP20060013663 申请日期 2006.01.23
申请人 RENESAS TECHNOLOGY CORP 发明人 TANAKA JUN;OTANI YOSHIHARU;OGATA KIYOSHI;SUZUKI YASUMICHI;HOTTA KATSUHIKO
分类号 H01L23/522;H01L21/312;H01L21/314;H01L21/316;H01L21/768 主分类号 H01L23/522
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