| 摘要 |
PROBLEM TO BE SOLVED: To provide a crystal growth method of a group-III nitride, by which a high-quality and large-size group-III nitride crystal can be manufactured at a lower cost than heretofore. SOLUTION: In the crystal growth method of the group-III nitride, comprising growing the group-III nitride crystal from a melt 24 wherein at least an alkali metal, a raw material of a group III metal, and nitrogen are dissolved, the group III nitride crystal 27 having a growth surface of (000-1) plane is grown from an area which is generally covered with the (0001) plane or the ä10-11} plane of the group III nitride 26 or a plane where the (0001) plane and the ä10-11} plane coexist. COPYRIGHT: (C)2006,JPO&NCIPI
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