| 摘要 |
<p>Methods for fabricating one or more metal (e.g., copper) damascene structures in a semiconductor wafer (400; 600; 700) use at least three polishing steps to reduce erosion topography in the resulting metal damascene structures and/or increase throughput. The polishing steps may be performed at four polishing units (202A, 202B, 202C, 202D) of a polishing apparatus (200), which may include one or more pivotable load/unload cups (204A, 204B, 204C) to transfer the semiconductor wafer between some of the polishing units.</p> |
