| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a manufacturing method and a manufacturing apparatus of a semiconductor device capable of suppressing variations in film thickness and the amount of impurities between semiconductor wafers and between lots for obtaining stable element characteristics in plasma surface reforming and an impurity introduction process. <P>SOLUTION: There are provided: a process for measuring the light intensity of at least one kind of wavelength in light emitted from plasma, or incidence power and reflection power in addition to the light intensity when one of nitriding treatment, oxidation treatment, and impurity introduction is performed onto the surfaces of a plurality of semiconductor substrates; a process for calculating exposure time for performing exposure to plasma for each semiconductor substrate, based on the light intensity, or the light intensity, the incident power, and the reflection power obtained by the measurement; and a process for exposing each semiconductor substrate to plasma based on the calculated exposure time to perform one of the nitriding treatment, oxidation treatment, and impurity introduction. <P>COPYRIGHT: (C)2006,JPO&NCIPI |
