| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide an oxide dielectric element having an oxide dielectric thin film, equipped with high dielectric constant and low leakage current density. <P>SOLUTION: The oxide dielectric element can be formed at a low temperature, by forming the oxide dielectric thin film under oxygen concentration of atmosphere lower than that of the conventional technology. The oxide dielectric thin film has a crystal structure, preferentially oriented at a crystal plane having a polarization axis in the vertical directions. There is no reaction between the oxide dielectric thin film and an electrode material. Further, a high spontaneous polarization, a small coercive field and a low leakage current density are achieved, by controlling the growth of crystal grains of the oxide dielectric thin film. <P>COPYRIGHT: (C)2006,JPO&NCIPI |
