| 摘要 |
PROBLEM TO BE SOLVED: To enhance the in-plane uniformity of resist pattern dimensions at the time of development. SOLUTION: A method of developing a photosensitive resist film which has been exposed to have a desired pattern comprises a process of supplying a developing solution to the photosensitive resist film and a process (S304) of making the developing solution on the photosensitive resist film flow. The process of making the developing solution flow includes a time period to allow the developing solution to reach the bottom of the photosensitive resist film region which is soluble in the developing solution between the starting time and the ending time. COPYRIGHT: (C)2006,JPO&NCIPI |
