发明名称 |
High-brightness gallium-nitride based light emitting diode structure |
摘要 |
A GaN-based LED structure is provided so that the brightness and lighting efficiency of the GaN-based LED are enhanced effectively. The greatest difference between the GaN-based LEDs according to the invention and the prior arts lies in the addition of a thin layer on top of the p-type contact layer within the traditional structure. The thin layer could be formed using silicon-nitride (SiN), or it could have a superlattice structure made of either SiN and undoped indium-gallium-nitride (InGaN), or SiN and undoped aluminum-gallium-indium-nitride (AlGaInN), respectively. Because of the use of SiN in the thin layer, the surfaces of the GaN-based LEDs would be micro-roughened, and the total internal reflection resulted from the GaN-based LEDs' higher index of refraction than the atmosphere could be avoided. The GaN-based LEDs according to the invention therefore have superior external quantum efficiency and lighting efficiency.
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申请公布号 |
US2006102930(A1) |
申请公布日期 |
2006.05.18 |
申请号 |
US20040987518 |
申请日期 |
2004.11.12 |
申请人 |
WU LIANG-WEN;TU RU-CHIN;YU CHENG-TSANG;WEN TZU-CHI;CHIEN FEN-REN |
发明人 |
WU LIANG-WEN;TU RU-CHIN;YU CHENG-TSANG;WEN TZU-CHI;CHIEN FEN-REN |
分类号 |
H01L31/109;H01L33/04;H01L33/14;H01L33/22;H01L33/32 |
主分类号 |
H01L31/109 |
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