| 摘要 |
A DRAM memory cell and a method of making a DRAM memory cell are provided. The DRAM memory cell includes a semiconductor substrate, including a trench formed therein and a buried plate region, at least a first doped region and a second doped region provided on a sidewall of the trench above the buried plate region in the substrate, where the first doped region contains carbon and the second doped region contains germanium provided in a portion of the first region, a dielectric layer formed on the bottom and sidewall of the trench, at least one polysilicon layer deposited in the trench and on the dielectric layer to cover the dielectric layer, and a transistor formed on a surface of the semiconductor substrate.
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