发明名称 Protection of active layers of memory cells during processing of other elements
摘要 A method of fabricating an electronic structure by providing a conductive layer, providing a dielectric layer over the conductive layer, providing first and second openings through the dielectric layer, providing first and second conductive bodies in the first and second openings respectively and in contact with the conductive layer, providing a memory structure over the first conductive body, providing a protective element over the memory structure, and undertaking processing on the second conductive body.
申请公布号 US2006102887(A1) 申请公布日期 2006.05.18
申请号 US20040987262 申请日期 2004.11.12
申请人 SPANSION LLC 发明人 AVANZINO STEVEN;SOKOLIK IGOR;PANGRLE SUZETTE;TRIPSAS NICHOLAS H.;SHIELDS JEFFREY
分类号 H01L29/02 主分类号 H01L29/02
代理机构 代理人
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