TRENCH INSULATED GATE FIELD EFFECT TRANSISTOR

摘要

The invention relates to a trench MOSFET with a pair of source regions (12,22) on either side of trench (10). Body regions (14, 24) and drift regions (16,26) are provided under the source regions, connected together by drain region 8 extending under the trench. Field plate (30) is provided to control the drift region. The device can operate in a bidirectional manner controlling current passing in either direction between the source regions (12, 22).